Product Summary

The ra30h1317m-31 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery of the ra30h1317m-31 can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Parametrics

ra30h1317m-31 absolute maximum ratings: (1)VDD, Drain Voltage: 17 V; (2)VGG, Gate Voltage: 6 V; (3)Pin, Input Power: 100 mW; (4)Pout, Output Power: 45 W; (5)Tcase(OP), Operation Case Temperature Range: -30 to +110 ℃; (6)Tstg, Storage Temperature Range: -40 to +110 ℃.

Features

ra30h1317m-31 features: (1)Enhancement-Mode MOSFET Transistors; (2)Pout＞30W, hT＞40% @ VDD=12.5V, VGG=5V, Pin=50mW; (3)Broadband Frequency Range: 135 to175MHz; (4)Low-Power Control Current IGG=1mA (typ) at VGG=5V; (5)Module Size: 66 × 21 × 9.88 mm; (6)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.

Diagrams

ra30h1317m-31 block diagram