(Hong Kong)
Product Summary
The rd70huf2 is a Silicon MOSFET Power Transistor. The rd70huf2 designed for HF High power amplifiers applications. The application of the rd70huf2 includes For output stage of high power amplifiers in HF Band mobile radio sets.
Parametrics
rd70huf2 absolute maximum ratings: (1)VDSS, Drain to source voltage: 50 V; (2)VGSS, Gate to source voltage: +/-20 V; (3)Pch, Channel dissipation: 150 W; (4)Pin, Input power: 5 W; (5)ID, Drain current: 20 A; (6)Tch, Channel Temperature: 175 ℃; (7)Tstg, Storage temperature: -40 to +175 ℃; (8)Rthj-c, Thermal resistance: 1.0 ℃/W.
Features
rd70huf2 features: (1)High power and High Gain: Pout＞70W, Gp＞13dB @Vdd=12.5V,f=30MHz; (2)High Efficiency: 60%typ.on HF Band.
Diagrams
