SI2301

P-channel enhancement mode field effect transistor, ±8V, -2.8A, 1.25W, SOT-23

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Price:: US $2.20~2.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	2.50 / Piece
101 ~ 800 :	2.40 / Piece
801 ~ 1600 :	2.20 / Piece

PartNumber:: SI2301

Brand:: Vishay Siliconix - Vishay | Pack: | D/C:

Availability:: Supply Ability: 8000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-06-23

From Other Seller

Part Number:SI2301
US $2.20 - 2.50
SI2301BDS-T1-E3

US $0.07 - 0.08 / Piece
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Product Summary

The si2301 is a P-channel enhancement mode field effect transistor.

Parametrics

si2301 absolute maximum ratings: (1) Drain-source Voltage VDS: -20V; (2) Drain Current-Continuous ID: -2.8A; (3) Drain Current-Pulsed IDM: -10A; (4) Gate-source Voltage VGS: ±8V; (5) Total Power Dissipation PD: 1.25W; (6) Thermal Resistance Junction to Ambient RθJA: 100°C/W; (7) Operating Junction Temperature TJ: -55 to +150°C; (8) Storage Temperature: -55 to +150°C.

Features

si2301 features: (1) -20V, -2.8A, RDS (ON)=120mΩ@VGS=-4.5V, RDS(ON)=150mΩ@VGS=-2.5V; (2) High dense cell design for extremely low RDS(ON) ; (3) Rugged and reliable; (4) High Speed Switching; (5) SOT-23 Package; (6) Marking Code: S1; (7) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0.