(Hong Kong)
Product Summary
The spp20n60c3 is a Cool MOS Power Transistor.
Parametrics
spp20n60c3 absolute maximum ratings: (1)Continuous drain current, ID: 20.7A; (2)Pulsed drain current, tp limited by Tjmax, ID puls: 62.1A; (3)Avalanche energy, single pulse ID=10A, VDD=50V, EAS: 690 mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax2); (5)ID=20A, VDD=50V; (6)EAR 1 1; (7)Avalanche current, repetitive tAR limited by Tjmax, IAR: 20 A; (8)Gate source voltage static, VGS: ±20 V; (9)Gate source voltage AC (f >1Hz), VGS: ±30V; (10)Power dissipation, TC = 25℃, Ptot: 208W; (11)Operating and storage temperature, Tj , Tstg: -55 to +150℃.
Features
spp20n60c3 features: (1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)High peak current capability; (7)Improved transconductance; (8)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 SPP20N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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SPP20N60C2 |
Infineon Technologies |
MOSFET N-CH 650V 20A TO-220AB |
Data Sheet |
Negotiable |
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SPP20N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V |
Data Sheet |
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SPP20N60CFD |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 20.7A |
Data Sheet |
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SPP20N60S5 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 20A |
Data Sheet |
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SPP20N65C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 20.7 |
Data Sheet |
Negotiable |
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SPP20N65C3XKSA1 |
Infineon Technologies |
MOSFET |
Data Sheet |
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