(Hong Kong)
Product Summary
The xqr17v16cc44v Radiation Hardened Static RAM is a high performance 32,768 x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywells radiation hardened technology, and is designed for use in systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ± 10% power supply. The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 50 mW/MHz in operation, and less than 5 mW/MHz in the low power disabled mode. The RAM read operation is fully asynchronous, with an associated typical access time of 20 ns.
Parametrics
xqr17v16cc44v absolute maximum ratings: (1)VDD Positive Supply Voltage (2): -0.5 to 7.0 V; (2)VPIN Voltage on Any Pin (2): -0.5 to VDD+0.5 V; (3)TSTORE Storage Temperature (Zero Bias): -65 to 150 °C; (4)TSOLDER Soldering Temperature - Time: 270-5 °C-s; (5)PD Total Package Power Dissipation (3): 2.5 W; (6)IOUT DC or Average Output Current: 25 mA; (7)VPROT ESD Input Protection Voltage (4): 2000 V; (8)ΘJC Thermal Resistance (Jct-to-Case)28 FP/36 FP: 2 °C/W; 28 DIP 10 °C/W; (9)TJ Junction Temperature: 175 °C.
Features
xqr17v16cc44v features: (1)Fabricated with RICMOS IV Bulk 0.8 μm Process (L eff = 0.65 μm); (2)Total Dose Hardness through 1x10 6 rad(SiO2 ); (3)Neutron Hardness through 1x10 14 cm-2; (4)Dynamic and Static Transient Upset Hardness through 1x10 9 rad(Si)/s; (5)Soft Error Rate of <1x10 -10 upsets/bit-day; (6)Dose Rate Survivability through 1x10 12 rad(Si)/s; (7)Latchup Free.
Diagrams
