Product Summary
The csd16301q2 is a N-Channel NexFET Power MOSFETs. The csd16301q2 has been designed to minimize losses in power conversion and load management applications. The SON 2x2 offers excellent thermal performance for the size of the package.
Parametrics
csd16301q2 absolute maximum ratings: (1)Drain to Source Voltage: 25 V; (2)Gate to Source Voltage: +10 / –8 V; (3)Continuous Drain Current, TC = 25°C: 5 A; (4)Continuous Drain Current: 5 A; (5)Pulsed Drain Current, TA = 25°C: 20 A; (6)Power Dissipation: 2.3 W; (7)Operating Junction and Storage: –55 to 150°C.
Features
csd16301q2 features: (1)Ultralow Qg and Qgd; (2)Low Thermal Resistance; (3)Pb Free Terminal Plating; (4)RoHS Compliant; (5)Halogen Free; (6)SON 2-mm×2-mm Plastic Package.
Diagrams
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![]() CSD16301Q2 |
![]() Texas Instruments |
![]() MOSFET N-Channel NexFET Power MOSFET |
![]() Data Sheet |
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![]() Data Sheet |
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![]() Data Sheet |
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