HYI18T512160B2F-3S

hyi18t512160b2f-3s, CMOS Synchronous DRAM device, –1.0 to +2.3 V, 2.5 to 3.5 PF

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Price:: US $2.20~2.50 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 100 :	2.50 / Piece
101 ~ 800 :	2.40 / Piece
801 ~ 1600 :	2.20 / Piece

PartNumber:: HYI18T512160B2F-3S

Brand:: Qimonda AG - Qimonda | Pack: | D/C:

Availability:: Supply Ability: 8000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-06-23

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Part Number:HYI18T512160B2F-3S
US $2.20 - 2.50
Quantity:

piece

Product Summary

The hyi18t512160b2f-3s is a high-speed Double-Data-Rate-Two CMOS Synchronous DRAM device, containing 1,073,741,824 bits and internally configured as anoctal quadbank DRAM. The 1-Gbit device is organized as either 32 Mbit × 4 I/O × 8 banks, 16 Mbit × 8 I/O × 8 banks or 8 Mbit × 16 I/O × 8 banks chip. The hyi18t512160b2f-3s achieves high speed transfer rates starting at 400 Mb/sec/pin for general applications.

Parametrics

HYI18T512160B2F-3S absolute maximum ratings: (1)Voltage on VDD pin relative to VSS: –1.0 to +2.3 V; (2)Voltage on VDDQ pin relative to VSS: –0.5 to +2.3 V; (3)Voltage on VDDL pin relative to VSS: –0.5 to +2.3 V; (4)Voltage on any pin relative to VSS: –0.5 to +2.3 V; (5)Storage Temperature: –55 to +100 ℃.

Features

HYI18T512160B2F-3S features: (1)Posted CAS with additive latency,; (2)Write latency = read latency - 1,; (3)Normal and weak strength data-output driver,; (4)Off-Chip Driver (OCD) impedance adjustment; (5)On-Die Termination (ODT).